Discrete Semiconductor Products

IPD50R399CPATMA1

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INFINEON

COOLMOS™ CP N-CHANNEL SUPERJUNCTION MOSFET 500 V ; DPAK TO-252 PACKAGE; 399 MOHM;

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Discrete Semiconductor Products

IPD50R399CPATMA1

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INFINEON

COOLMOS™ CP N-CHANNEL SUPERJUNCTION MOSFET 500 V ; DPAK TO-252 PACKAGE; 399 MOHM;

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPD50R399CPATMA1

Current - Continuous Drain (Id) @ 25°C	9 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	23 nC
Input Capacitance (Ciss) (Max) @ Vds	890 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)	83 W
Rds On (Max) @ Id, Vgs	399 mOhm
Supplier Device Package	PG-TO252-3-313
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

IPD50R Series

Part	Rds On (Max) @ Id, Vgs	FET Type	Operating Temperature [Max]	Operating Temperature [Min]	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Package / Case	Drain to Source Voltage (Vdss)	Technology	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Mounting Type	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
INFINEON IPD50R399CPATMA1	399 mOhm	N-Channel	150 °C	-55 °C	10 V	9 A	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	500 V	MOSFET (Metal Oxide)	890 pF	83 W	23 nC	3.5 V	Surface Mount	PG-TO252-3-313
INFINEON IPD50R380CEBTMA1	380 mOhm	N-Channel	150 °C	-55 °C	13 V	14.1 A	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	500 V	MOSFET (Metal Oxide)		73 W	24.8 nC	3.5 V	Surface Mount	PG-TO252-3	584 pF
INFINEON IPD50R520CP	520 mOhm	N-Channel	150 °C	-55 °C	10 V	7.1 A	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	500 V	MOSFET (Metal Oxide)	680 pF	66 W	17 nC	3.5 V	Surface Mount	PG-TO252-3-11
INFINEON IPD50R500CEATMA1	500 mOhm	N-Channel	150 °C	-55 °C	13 V	7.6 A	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	500 V	MOSFET (Metal Oxide)				3.5 V	Surface Mount	PG-TO252-3	433 pF	57 W	18.7 nC
INFINEON IPD50R950CEBTMA1	950 mOhm	N-Channel	150 °C	-55 °C	13 V	4.3 A	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	500 V	MOSFET (Metal Oxide)	231 pF	34 W	10.5 nC	3.5 V	Surface Mount	PG-TO252-3-11
INFINEON IPD50R800CEBTMA1	800 mOhm	N-Channel	150 °C	-55 °C	13 V	5 A	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	500 V	MOSFET (Metal Oxide)		40 W		3.5 V	Surface Mount	PG-TO252-3	280 pF		12.4 nC
INFINEON IPD50R380CEAUMA1	380 mOhm	N-Channel	150 °C	-55 °C	13 V	14.1 A	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	500 V	MOSFET (Metal Oxide)		98 W	24.8 nC	3.5 V	Surface Mount	PG-TO252-3	584 pF
INFINEON IPD50R650CEATMA1	650 mOhm	N-Channel	150 °C	-55 °C	13 V	6.1 A	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	500 V	MOSFET (Metal Oxide)			15 nC	3.5 V	Surface Mount	PG-TO252-3	342 pF
INFINEON IPD50R950CEATMA1	950 mOhm	N-Channel	150 °C	-55 °C	13 V	4.3 A	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	500 V	MOSFET (Metal Oxide)	231 pF	53 W	10.5 nC	3.5 V	Surface Mount	PG-TO252-3
INFINEON IPD50R280CEATMA1	280 mOhm	N-Channel	150 °C	-55 °C	13 V	13 A	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	500 V	MOSFET (Metal Oxide)	773 pF	119 W		3.5 V	Surface Mount	PG-TO252-3			32.6 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 2.09
	Tape & Reel (TR)	2500	$ 0.83

Description

General part information

IPD50R Series

CoolMOS™ CP, Infineon's fifth series of CoolMOS™, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV.

Documents

Technical documentation and resources