Discrete Semiconductor Products

IPB180N03S4LH0ATMA1

Obsolete

INFINEON’S IPB180N03S4L-H0 OPTIMOS-T2, 40V MOSFET WITH ULTRA LOW RDS(ON), 175°C OPERATING TEMP, AEC-Q101 QUALIFIED. FIND DATA SHEET, PARAMETERS AND ORDERING INFORMATION.

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DocumentsDatasheet Infineon-MA005740879-MaterialContentSheet-v01_00-EN +1

Discrete Semiconductor Products

IPB180N03S4LH0ATMA1

Obsolete

INFINEON

INFINEON’S IPB180N03S4L-H0 OPTIMOS-T2, 40V MOSFET WITH ULTRA LOW RDS(ON), 175°C OPERATING TEMP, AEC-Q101 QUALIFIED. FIND DATA SHEET, PARAMETERS AND ORDERING INFORMATION.

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DocumentsDatasheet Infineon-MA005740879-MaterialContentSheet-v01_00-EN +1

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPB180N03S4LH0ATMA1

Current - Continuous Drain (Id) @ 25°C	180 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	300 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	23000 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-263-7, D2PAK (6 Leads + Tab)
Power Dissipation (Max)	250 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	0.95 mOhm
Supplier Device Package	PG-TO263-7-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id	2.2 V

IPB180 Series

Part	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Grade	Mounting Type	Package / Case	Drain to Source Voltage (Vdss)	Qualification	Vgs (Max)	FET Type	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Vgs (Max) [Max]	Vgs (Max) [Min]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id [Max]
INFINEON IPB180P04P4L02ATMA1	PG-TO263-7-3	18700 pF	4.5 V 10 V	Automotive	Surface Mount	D2PAK (6 Leads + Tab) TO-263-7	40 V	AEC-Q101	16 V	P-Channel	MOSFET (Metal Oxide)	286 nC	2.4 mOhm	175 °C	-55 °C	180 A	2.2 V	150 W
INFINEON IPB180P04P4L02AUMA2	PG-TO263-7-3	18700 pF	4.5 V 10 V	Automotive	Surface Mount	D2PAK (6 Leads + Tab) TO-263-7	40 V	AEC-Q101		P-Channel	MOSFET (Metal Oxide)	286 nC	2.4 mOhm	175 °C	-55 °C	180 A	2.2 V	150 W	5 V	-16 V
INFINEON IPB180N06S4H1ATMA2	PG-TO263-7	21900 pF	10 V	Automotive	Surface Mount	D2PAK (6 Leads + Tab) TO-263-7	60 V	AEC-Q101	20 V	N-Channel	MOSFET (Metal Oxide)	270 nC	1.7 mOhm	175 °C	-55 °C	180 A	4 V	250 W
INFINEON IPB180N03S4LH0ATMA1	PG-TO263-7-3		4.5 V 10 V	Automotive	Surface Mount	D2PAK (6 Leads + Tab) TO-263-7	30 V	AEC-Q101	16 V	N-Channel	MOSFET (Metal Oxide)		0.95 mOhm	175 °C	-55 °C	180 A	2.2 V	250 W			23000 pF	300 nC
INFINEON IPB180N10S402ATMA1	PG-TO263-7-3	14600 pF	10 V	Automotive	Surface Mount	D2PAK (6 Leads + Tab) TO-263-7	100 V	AEC-Q101	20 V	N-Channel	MOSFET (Metal Oxide)	200 nC	2.5 mOhm	175 °C	-55 °C	180 A		300 W					3.5 V
INFINEON IPB180N04S4H0ATMA1	PG-TO263-7-3		10 V	Automotive	Surface Mount	D2PAK (6 Leads + Tab) TO-263-7	40 V	AEC-Q101	20 V	N-Channel	MOSFET (Metal Oxide)		1.1 mOhm	175 °C	-55 °C	180 A	4 V	250 W			17940 pF	225 nC
INFINEON IPB180N10S403ATMA1	PG-TO263-7-3		10 V	Automotive	Surface Mount	D2PAK (6 Leads + Tab) TO-263-7	100 V	AEC-Q101	20 V	N-Channel	MOSFET (Metal Oxide)	140 nC	3.3 mOhm	175 °C	-55 °C	180 A	3.5 V	250 W			10120 pF
INFINEON IPB180P04P403ATMA2	PG-TO263-7-3			Automotive	Surface Mount	D2PAK (6 Leads + Tab) TO-263-7	40 V	AEC-Q101	20 V	P-Channel	MOSFET (Metal Oxide)		2.8 mOhm	175 °C	-55 °C	180 A	4 V	150 W			17640 pF
INFINEON IPB180N04S4L01ATMA1	PG-TO263-7-3		4.5 V 10 V	Automotive	Surface Mount	D2PAK (6 Leads + Tab) TO-263-7	40 V	AEC-Q101		N-Channel	MOSFET (Metal Oxide)		1.2 mOhm	175 °C	-55 °C	180 A	2.2 V	188 W	20 V	-16 V	19100 pF	245 nC
INFINEON IPB180N08S402ATMA1	PG-TO263-7-3		10 V	Automotive	Surface Mount	D2PAK (6 Leads + Tab) TO-263-7	80 V	AEC-Q101	20 V	N-Channel	MOSFET (Metal Oxide)		2.2 mOhm	175 °C	-55 °C	180 A	4 V	277 W			11550 pF	167 nC