Discrete Semiconductor Products

RN1911(T5L,F,T)

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TRANS 2NPN PREBIAS 0.1W US6

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Discrete Semiconductor Products

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TRANS 2NPN PREBIAS 0.1W US6

Technical Specifications

Parameters and characteristics for this part

Specification	RN1911(T5L,F,T)

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Frequency - Transition	250 MHz
Mounting Type	Surface Mount
Package / Case	SOT-363, SC-88, 6-TSSOP
Power - Max [Max]	100 mW
Resistor - Base (R1)	4.7 kOhms
Supplier Device Package	US6
Transistor Type	2 NPN - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Bipolar Transistors, NPN x 2 Bias Resistor Built-in Transistors (BRT), 10 kΩ/Infinity, SOT-363(US6)

Part	Transistor Type	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Power - Max [Max]	Supplier Device Package	Resistor - Base (R1)	Current - Collector (Ic) (Max) [Max]
Toshiba Semiconductor and Storage RN1911(T5L,F,T)	2 NPN - Pre-Biased (Dual)	6-TSSOP SC-88 SOT-363	120	250 MHz	50 V	100 nA	300 mV	Surface Mount	100 mW	US6	4.7 kOhms	100 mA
Toshiba Semiconductor and Storage RN1911,LXHF(CT	2 NPN - Pre-Biased (Dual)	6-TSSOP SC-88 SOT-363	120	250 MHz	50 V	100 nA	300 mV	Surface Mount	200 mW	US6		100 mA
Toshiba Semiconductor and Storage RN1911FE,LF(CT	2 NPN - Pre-Biased (Dual)	SOT-563 SOT-666	120	250 MHz	50 V	100 nA	300 mV	Surface Mount	100 mW	ES6		100 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar Transistors, NPN x 2 Bias Resistor Built-in Transistors (BRT), 10 kΩ/Infinity, SOT-363(US6)

Technical documentation and resources

No documents available