Discrete Semiconductor Products

SI7220DN-T1-E3

LTB

MOSFET 2N-CH 60V 3.4A PPAK 1212

Search across all available documentation for this part.

Discrete Semiconductor Products

LTB

MOSFET 2N-CH 60V 3.4A PPAK 1212

Technical Specifications

Parameters and characteristics for this part

Specification	SI7220DN-T1-E3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	3.4 A
Drain to Source Voltage (Vdss)	60 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	20 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8 Dual
Rds On (Max) @ Id, Vgs	60 mOhm
Supplier Device Package	PowerPAK® 1212-8 Dual
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

Part	Mounting Type	Package / Case	Technology	Configuration	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	FET Feature	Supplier Device Package	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs
Vishay General Semiconductor - Diodes Division SI7220DN-T1-E3	Surface Mount	PowerPAK® 1212-8 Dual	MOSFET (Metal Oxide)	2 N-Channel (Dual)	-55 °C	150 °C	60 V	20 nC	Logic Level Gate	PowerPAK® 1212-8 Dual	3 V	3.4 A	60 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 60V 3.4A 1.3W Surface Mount PowerPAK® 1212-8 Dual

Technical documentation and resources