Discrete Semiconductor Products

KSD1408-Y-BP

Obsolete

TRANS NPN 80V 4A TO-220F

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

TRANS NPN 80V 4A TO-220F

Technical Specifications

Parameters and characteristics for this part

Specification	KSD1408-Y-BP

Current - Collector (Ic) (Max) [Max]	4 A
Current - Collector Cutoff (Max) [Max]	30 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Frequency - Transition	8 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power - Max [Max]	2 W
Supplier Device Package	TO-220F
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

Part	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Frequency - Transition	Transistor Type	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Current - Collector (Ic) (Max) [Max]
Micro Commercial Components KSD1408-Y-BP	1.5 V	Through Hole	TO-220F	-55 °C	150 °C	8 MHz	NPN	30 µA	120	2 W	80 V	TO-220-3 Full Pack	4 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor NPN 80 V 4 A 8MHz 2 W Through Hole TO-220F

Technical documentation and resources

No documents available