Specification	NTLUF4189NZTAG

Current - Continuous Drain (Id) @ 25°C	1.2 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Feature	Schottky Diode (Isolated)
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	3 nC
Input Capacitance (Ciss) (Max) @ Vds	95 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-UFDFN Exposed Pad
Power Dissipation (Max) [Max]	500 mW
Rds On (Max) @ Id, Vgs	200 mOhm
Supplier Device Package	6-UDFN (1.6x1.6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1.5 V

NTLUF4189NZ Series

Single N-Channel µCool™ Power MOSFET and Schottky Diode 30V 1.5A 200mΩ

Part	Drain to Source Voltage (Vdss)	FET Feature	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Technology	Supplier Device Package	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Package / Case	Gate Charge (Qg) (Max) @ Vgs
ON Semiconductor NTLUF4189NZTAG	30 V	Schottky Diode (Isolated)	200 mOhm	-55 °C	150 °C	N-Channel	1.5 V	95 pF	MOSFET (Metal Oxide)	6-UDFN (1.6x1.6)	Surface Mount	2.5 V 4.5 V	500 mW	1.2 A	8 V	6-UFDFN Exposed Pad	3 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Power MOSFET and Schottky Diode 30 V, N−Channel with 0.5 A Schottky Barrier Diode, 1.6 x 1.6 x 0.55 mm µCool™ Package