Discrete Semiconductor Products

PSMN2R0-40YLDX

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PSMN2R0-40YLD - N-CHANNEL 40 V, 2.1 MΩ, 180 A LOGIC LEVEL MOSFET IN LFPAK56 USING NEXTPOWER-S3 SCHOTTKY-PLUS TECHNOLOGY@EN-US SOIC 4-PIN

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Discrete Semiconductor Products

PSMN2R0-40YLDX

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Freescale Semiconductor - NXP

PSMN2R0-40YLD - N-CHANNEL 40 V, 2.1 MΩ, 180 A LOGIC LEVEL MOSFET IN LFPAK56 USING NEXTPOWER-S3 SCHOTTKY-PLUS TECHNOLOGY@EN-US SOIC 4-PIN

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Technical Specifications

Parameters and characteristics for this part

Specification	PSMN2R0-40YLDX

Current - Continuous Drain (Id) @ 25°C	180 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Feature	Schottky Diode (Body)
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	92 nC
Input Capacitance (Ciss) (Max) @ Vds	6581 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-669, SC-100
Power Dissipation (Max) [Max]	166 W
Rds On (Max) @ Id, Vgs	2.1 mOhm
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.05 V

PSMN2R0-25YLD Series

N-channel 25 V, 2.09 mΩ, 179 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology

Part	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Vgs(th) (Max) @ Id	Supplier Device Package	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	FET Feature	Package / Case	Drain to Source Voltage (Vdss)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id [Max]	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs
Freescale Semiconductor - NXP PSMN2R0-25YLDX	4.5 V 10 V	20 V	2.2 V	LFPAK56 Power-SO8	MOSFET (Metal Oxide)	34.1 nC	N-Channel	2485 pF	115 W	100 A	2.09 mOhm	Schottky Diode (Body)	SC-100 SOT-669	25 V	Surface Mount	-55 °C	175 ░C
Freescale Semiconductor - NXP PSMN2R0-30YLE,115	4.5 V 10 V	20 V		LFPAK56 Power-SO8	MOSFET (Metal Oxide)	87 nC	N-Channel	5217 pF	272 W	100 A	2 mOhm		SC-100 SOT-669	30 V	Surface Mount	-55 °C	175 ░C	2.15 V
Freescale Semiconductor - NXP PSMN2R0-40YLDX	4.5 V 10 V	20 V	2.05 V	LFPAK56 Power-SO8	MOSFET (Metal Oxide)		N-Channel	6581 pF		180 A	2.1 mOhm	Schottky Diode (Body)	SC-100 SOT-669	40 V	Surface Mount	-55 °C	175 ░C		166 W	92 nC
Freescale Semiconductor - NXP PSMN2R0-60PSRQ	10 V	20 V		TO-220AB	MOSFET (Metal Oxide)	192 nC	N-Channel	13500 pF	338 W	120 A	2.2 mOhm		TO-220-3	60 V	Through Hole	-55 °C	175 ░C
Freescale Semiconductor - NXP PSMN2R0-30BL,118	4.5 V 10 V	20 V		D2PAK	MOSFET (Metal Oxide)	117 nC	N-Channel	6810 pF	211 W	100 A	2.1 mOhm		D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	30 V	Surface Mount	-55 °C	175 ░C	2.15 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 2.56
		10	$ 1.65
		100	$ 1.13
		500	$ 0.91
	Digi-Reel®	1	$ 2.56
		10	$ 1.65
		100	$ 1.13
		500	$ 0.91
	Tape & Reel (TR)	1500	$ 0.74

Description

General part information

PSMN2R0-25YLD Series

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique "SchottkyPlus" technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.

Documents

Technical documentation and resources