Discrete Semiconductor Products

IPP111N15N3GXKSA1

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INFINEON

MOSFET TRANSISTOR, N CHANNEL, 83 A, 150 V, 0.0094 OHM, 10 V, 3 V ROHS COMPLIANT: YES

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Discrete Semiconductor Products

IPP111N15N3GXKSA1

Active

INFINEON

MOSFET TRANSISTOR, N CHANNEL, 83 A, 150 V, 0.0094 OHM, 10 V, 3 V ROHS COMPLIANT: YES

Deep-Dive with AI

DocumentsApplication Note EN Datasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPP111N15N3GXKSA1

Current - Continuous Drain (Id) @ 25°C	83 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	55 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	3230 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	214 W
Rds On (Max) @ Id, Vgs	11.1 mOhm
Supplier Device Package	PG-TO220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IPP111 Series

Part	FET Type	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Supplier Device Package	Drain to Source Voltage (Vdss)	Mounting Type	Package / Case	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id
INFINEON IPP111N15N3GXKSA1	N-Channel	11.1 mOhm	55 nC	8 V 10 V	20 V	3230 pF	83 A	214 W	PG-TO220-3	150 V	Through Hole	TO-220-3	MOSFET (Metal Oxide)	175 °C	-55 °C	4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	1524	$ 2.56
	Tube	1	$ 4.69
		10	$ 3.11
		100	$ 2.21
		500	$ 1.82
		1000	$ 1.73
Newark	Each	1	$ 4.04
		10	$ 3.02
		25	$ 2.84
		50	$ 2.65
		100	$ 2.48
		250	$ 2.29
		500	$ 2.09

Description

General part information

IPP111 Series

The 150 V OptiMOS™ achieves a reduction in RDS(on)of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS™ part.

Documents

Technical documentation and resources

Application Note EN

Datasheet