Zenode.ai Logo
Beta
BCV27-QR
Discrete Semiconductor Products

BCV27-QR

Active
Nexperia USA Inc.

DARLINGTON TRANSISTORS PNP DARLINGTON TRANSISTOR

Deep-Dive with AI

Search across all available documentation for this part.

BCV27-QR
Discrete Semiconductor Products

BCV27-QR

Active
Nexperia USA Inc.

DARLINGTON TRANSISTORS PNP DARLINGTON TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

SpecificationBCV27-QR
Current - Collector (Ic) (Max) [Max]500 mA
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]20000
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power - Max [Max]250 mW
QualificationAEC-Q101
Supplier Device PackageTO-236AB
Vce Saturation (Max) @ Ib, Ic1 V
Voltage - Collector Emitter Breakdown (Max) [Max]30 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.07
MouserN/A 1$ 0.32
10$ 0.22
100$ 0.11
1000$ 0.06
3000$ 0.05
9000$ 0.04
24000$ 0.04
45000$ 0.04
99000$ 0.03

Description

General part information

BCV27-Q Series

NPN Darlington transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package.