Discrete Semiconductor Products

SI1442DH-T1-GE3

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MOSFET N-CH 12V 4A SC70-6

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Discrete Semiconductor Products

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MOSFET N-CH 12V 4A SC70-6

Technical Specifications

Parameters and characteristics for this part

Specification	SI1442DH-T1-GE3

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	33 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1010 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Power Dissipation (Max)	2.8 W, 1.56 W
Rds On (Max) @ Id, Vgs [Max]	20 mOhm
Supplier Device Package	SC-70-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

Part	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Mounting Type	Drain to Source Voltage (Vdss)	Package / Case	Technology	Gate Charge (Qg) (Max) @ Vgs	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Supplier Device Package	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]
Vishay General Semiconductor - Diodes Division SI1442DH-T1-GE3	4 A	1010 pF	1.56 W 2.8 W	Surface Mount	12 V	6-TSSOP SC-88 SOT-363	MOSFET (Metal Oxide)	33 nC	N-Channel	1.8 V 4.5 V	8 V	SC-70-6	1 V	20 mOhm	-55 °C	150 °C

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General part information

N-Channel 12 V 4A (Ta) 1.56W (Ta), 2.8W (Tc) Surface Mount SC-70-6

Technical documentation and resources