Discrete Semiconductor Products

SI1489EDH-T1-GE3

Obsolete

MOSFET P-CH 8V 2A SOT-363

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 8V 2A SOT-363

Technical Specifications

Parameters and characteristics for this part

Specification	SI1489EDH-T1-GE3

Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	8 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.2 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	16 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Power Dissipation (Max) [Max]	2.8 W
Rds On (Max) @ Id, Vgs	48 mOhm
Supplier Device Package	SC-70-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	5 V
Vgs(th) (Max) @ Id	700 mV

Part	Rds On (Max) @ Id, Vgs	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Technology	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case
Vishay General Semiconductor - Diodes Division SI1489EDH-T1-GE3	48 mOhm	Surface Mount	1.2 V 4.5 V	8 V	2 A	2.8 W	700 mV	MOSFET (Metal Oxide)	5 V	16 nC	P-Channel	SC-70-6	-55 °C	150 °C	6-TSSOP SC-88 SOT-363

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 8 V 2A (Tc) 2.8W (Tc) Surface Mount SC-70-6

Technical documentation and resources