Discrete Semiconductor Products

FQAF65N06

Obsolete

MOSFET N-CH 60V 49A TO3PF

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 60V 49A TO3PF

Technical Specifications

Parameters and characteristics for this part

Specification	FQAF65N06

Current - Continuous Drain (Id) @ 25°C	49 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	65 nC
Input Capacitance (Ciss) (Max) @ Vds	2410 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-3P-3 Full Pack
Power Dissipation (Max)	86 W
Rds On (Max) @ Id, Vgs	16 mOhm
Supplier Device Package	TO-3PF
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

Part	Mounting Type	Technology	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Supplier Device Package	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs
ON Semiconductor FQAF65N06	Through Hole	MOSFET (Metal Oxide)	10 V	49 A	16 mOhm	65 nC	86 W	N-Channel	-55 °C	175 ░C	25 V	TO-3PF	TO-3P-3 Full Pack	2410 pF	60 V	4 V
ON Semiconductor FQAF6N80	Through Hole	MOSFET (Metal Oxide)	10 V	4.4 A	1.95 Ohm		90 W	N-Channel	-55 °C	150 °C	30 V	TO-3PF	TO-3P-3 Full Pack	1500 pF	800 V	5 V	31 nC
ON Semiconductor FQAF6N80	Through Hole	MOSFET (Metal Oxide)	10 V	4.4 A	1.95 Ohm		90 W	N-Channel	-55 °C	150 °C	30 V	TO-3PF	TO-3P-3 Full Pack	1500 pF	800 V	5 V	31 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 60 V 49A (Tc) 86W (Tc) Through Hole TO-3PF

Technical documentation and resources