Discrete Semiconductor Products

SI1300BDL-T1-E3

Obsolete

MOSFET N-CH 20V 400MA SC70-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 20V 400MA SC70-3

Technical Specifications

Parameters and characteristics for this part

Specification	SI1300BDL-T1-E3

Current - Continuous Drain (Id) @ 25°C	400 mA
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	0.84 nC
Input Capacitance (Ciss) (Max) @ Vds	35 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-70, SOT-323
Power Dissipation (Max)	200 mW, 190 mW
Rds On (Max) @ Id, Vgs	850 mOhm
Supplier Device Package	SC-70-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Supplier Device Package	FET Type	Mounting Type	Technology	Rds On (Max) @ Id, Vgs	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Vgs(th) (Max) @ Id
Vishay General Semiconductor - Diodes Division SI1300BDL-T1-E3	35 pF	20 V	2.5 V 4.5 V	400 mA	190 mW 200 mW	SC-70-3	N-Channel	Surface Mount	MOSFET (Metal Oxide)	850 mOhm	8 V	-55 °C	150 °C	0.84 nC	SC-70 SOT-323	1 V
Vishay General Semiconductor - Diodes Division SI1300BDL-T1-GE3	35 pF	20 V	2.5 V 4.5 V	400 mA	190 mW 200 mW	SC-70-3	N-Channel	Surface Mount	MOSFET (Metal Oxide)	850 mOhm	8 V	-55 °C	150 °C	0.84 nC	SC-70 SOT-323	1 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 20 V 400mA (Tc) 190mW (Ta), 200mW (Tc) Surface Mount SC-70-3

Technical documentation and resources