Discrete Semiconductor Products

PJQ5548-AU_R2_002A1

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40V N-CHANNEL ENHANCEMENT MODE M

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Discrete Semiconductor Products

Active

40V N-CHANNEL ENHANCEMENT MODE M

Technical Specifications

Parameters and characteristics for this part

Specification	PJQ5548-AU_R2_002A1

Current - Continuous Drain (Id) @ 25°C	14.5 A, 48 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	13 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	778 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	3.3 W, 36 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	8.8 mOhm
Supplier Device Package	DFN5060-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.3 V

Part	Mounting Type	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Technology	Current - Continuous Drain (Id) @ 25°C	Package / Case	Vgs (Max)	Qualification	FET Type	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Grade	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)
Panjit International Inc. PJQ5548-AU_R2_002A1	Surface Mount	40 V	13 nC	3.3 W 36 W	MOSFET (Metal Oxide)	14.5 A 48 A	8-PowerVDFN	20 V	AEC-Q101	N-Channel	175 °C	-55 °C	778 pF	DFN5060-8	Automotive	8.8 mOhm	2.3 V	4.5 V 10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 40 V 14.5A (Ta), 48A (Tc) 3.3W (Ta), 36W (Tc) Surface Mount DFN5060-8

Technical documentation and resources