
Discrete Semiconductor Products
BAS21TH-QR
ActiveNexperia USA Inc.
SMALL SIGNAL SWITCHING DIODES HIGH-VOLTAGE SWITCHING DIODE
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Discrete Semiconductor Products
BAS21TH-QR
ActiveNexperia USA Inc.
SMALL SIGNAL SWITCHING DIODES HIGH-VOLTAGE SWITCHING DIODE
Technical Specifications
Parameters and characteristics for this part
| Specification | BAS21TH-QR |
|---|---|
| Capacitance @ Vr, F | 5 pF |
| Current - Average Rectified (Io) | 200 mA |
| Current - Reverse Leakage @ Vr | 100 nA |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | 175 °C |
| Package / Case | SOT-23-3, TO-236-3, SC-59 |
| Qualification | AEC-Q101 |
| Reverse Recovery Time (trr) | 50 ns |
| Speed | 200 mA |
| Speed | Any Speed |
| Supplier Device Package | TO-236AB |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.25 V |
BAS21TH-Q Series
High-voltage switching diode
| Part | Grade | Qualification | Voltage - Forward (Vf) (Max) @ If | Operating Temperature - Junction | Reverse Recovery Time (trr) | Current - Average Rectified (Io) | Current - Reverse Leakage @ Vr | Supplier Device Package | Technology | Capacitance @ Vr, F | Package / Case | Speed | Speed | Voltage - DC Reverse (Vr) (Max) [Max] | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | Automotive | AEC-Q101 | 1.25 V | 175 °C | 50 ns | 200 mA | 100 nA | TO-236AB | Standard | 5 pF | SC-59 SOT-23-3 TO-236-3 | 200 mA | Any Speed | 200 V | Surface Mount |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
BAS21TH-Q Series
High-voltage switching diode, encapsulated in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
Documents
Technical documentation and resources