Discrete Semiconductor Products

BUK9Y14-40B,115

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MOSFET N-CH 40V 56A LFPAK56

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Discrete Semiconductor Products

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MOSFET N-CH 40V 56A LFPAK56

Technical Specifications

Parameters and characteristics for this part

Specification	BUK9Y14-40B,115

Current - Continuous Drain (Id) @ 25°C	56 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	5 V
FET Type	N-Channel
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1800 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-669, SC-100
Power Dissipation (Max) [Max]	85 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	11 mOhm
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	15 V
Vgs(th) (Max) @ Id	2 V

Part	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Qualification	Vgs (Max)	Grade	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Package / Case	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Drain to Source Voltage (Vdss)	FET Type	Technology	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs
Freescale Semiconductor - NXP BUK9Y14-80E,115	28.9 nC	Surface Mount	AEC-Q101	10 V	Automotive	4640 pF	62 A	5 V	147 W	2.1 V	SC-100 SOT-669	14 mOhm	-55 °C	175 ░C	LFPAK56 Power-SO8	80 V	N-Channel	MOSFET (Metal Oxide)
Freescale Semiconductor - NXP BUK9Y14-40B,115		Surface Mount	AEC-Q101	15 V	Automotive	1800 pF	56 A	5 V		2 V	SC-100 SOT-669		-55 °C	175 ░C	LFPAK56 Power-SO8	40 V	N-Channel	MOSFET (Metal Oxide)	85 W	11 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 40 V 56A (Tc) 85W (Tc) Surface Mount LFPAK56, Power-SO8

Technical documentation and resources