Discrete Semiconductor Products

IRGP4063D1-EPBF

Obsolete

IGBT 600V 100A 330W TO-247AD

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Discrete Semiconductor Products

Obsolete

IGBT 600V 100A 330W TO-247AD

Technical Specifications

Parameters and characteristics for this part

Specification	IRGP4063D1-EPBF

Current - Collector (Ic) (Max) [Max]	100 A
Current - Collector Pulsed (Icm)	192 A
Gate Charge	150 nC
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-247-3
Power - Max [Max]	330 W
Reverse Recovery Time (trr)	80 ns
Supplier Device Package	TO-247AD
Switching Energy	1.1 mJ, 1.4 mJ
Td (on/off) @ 25°C [custom]	160 ns
Td (on/off) @ 25°C [custom]	60 ns
Test Condition	400 V, 48 A, 10 Ohm, 15 V
Vce(on) (Max) @ Vge, Ic	2.14 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Current - Collector (Ic) (Max) [Max]	IGBT Type	Test Condition	Reverse Recovery Time (trr)	Vce(on) (Max) @ Vge, Ic	Operating Temperature [Max]	Operating Temperature [Min]	Power - Max [Max]	Package / Case	Switching Energy	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Gate Charge	Current - Collector Pulsed (Icm)	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]	Mounting Type
INFINEON IRGP4063D-EPBF	96 A	Trench	10 Ohm 15 V 48 A 400 V	115 ns	2.14 V	175 °C	-55 °C	330 W	TO-247-3	1.28 mJ 625 µJ	600 V	TO-247AD	140 nC	200 A	60 ns	145 ns	Through Hole
INFINEON IRGP4063D1-EPBF	100 A		10 Ohm 15 V 48 A 400 V	80 ns	2.14 V	175 °C	-40 °C	330 W	TO-247-3	1.1 mJ 1.4 mJ	600 V	TO-247AD	150 nC	192 A	60 ns	160 ns	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

IGBT 600 V 100 A 330 W Through Hole TO-247AD

Technical documentation and resources