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SC-76, SOD-323, UMD2
Discrete Semiconductor Products

BAT1503WE6327HTSA1

Active
INFINEON

RF SCHOTTKY DIODE, SINGLE, 4 V, 110 MA, 410 MV, 0.35 PF, SOD-323

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SC-76, SOD-323, UMD2
Discrete Semiconductor Products

BAT1503WE6327HTSA1

Active
INFINEON

RF SCHOTTKY DIODE, SINGLE, 4 V, 110 MA, 410 MV, 0.35 PF, SOD-323

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBAT1503WE6327HTSA1
Current - Max [Max]110 mA
Diode TypeSchottky - Single
Operating Temperature150 °C
Package / CaseSOD-323, SC-76
Power Dissipation (Max) [Max]100 mW
Supplier Device PackagePG-SOD323-3D
Voltage - Peak Reverse (Max) [Max]4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.79
10$ 0.49
100$ 0.32
500$ 0.24
1000$ 0.22
Digi-Reel® 1$ 0.79
10$ 0.49
100$ 0.32
500$ 0.24
1000$ 0.22
N/A 70439$ 0.79
Tape & Reel (TR) 3000$ 0.19
6000$ 0.17
9000$ 0.16
15000$ 0.16
21000$ 0.15
30000$ 0.14
NewarkEach (Supplied on Cut Tape) 1$ 0.67
10$ 0.43
25$ 0.38
50$ 0.33
100$ 0.28
250$ 0.27
500$ 0.25
1000$ 0.22

Description

General part information

BAT1503 Series

This Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-03W a suitable choice for mixer and detector functions in applications which frequencies are as high as 12 GHz.