Discrete Semiconductor Products

SIR681DP-T1-RE3

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MOSFET P-CH 80V 17.6A/71.9A PPAK

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Discrete Semiconductor Products

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MOSFET P-CH 80V 17.6A/71.9A PPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SIR681DP-T1-RE3

Current - Continuous Drain (Id) @ 25°C	71.9 A, 17.6 A
Drain to Source Voltage (Vdss)	80 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	105 nC
Input Capacitance (Ciss) (Max) @ Vds	4850 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	6.25 W, 104 W
Rds On (Max) @ Id, Vgs	11.2 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.6 V

Part	Vgs(th) (Max) @ Id	Supplier Device Package	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	FET Type	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Technology	Power Dissipation (Max)
Vishay General Semiconductor - Diodes Division SIR681DP-T1-RE3	2.6 V	PowerPAK® SO-8	80 V	17.6 A 71.9 A	PowerPAK® SO-8	Surface Mount	-55 °C	150 °C	105 nC	P-Channel	11.2 mOhm	4850 pF	20 V	MOSFET (Metal Oxide)	6.25 W 104 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 80 V 17.6A (Ta), 71.9A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources