Specification	PBHV8550XF

Current - Collector (Ic) (Max) [Max]	150 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	50
Frequency - Transition	35 MHz
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-243AA
Power - Max [Max]	520 mW
Qualification	AEC-Q101
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	90 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	500 V

PBHV8550X Series

500 V, 150 mA NPN high-voltage low VCEsat (BISS) transistor

Part	Operating Temperature	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Qualification	Voltage - Collector Emitter Breakdown (Max) [Max]	Frequency - Transition	Grade	Package / Case	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]
Nexperia USA Inc. PBHV8550XF	150 °C	100 nA	90 mV	NPN	50	Surface Mount	AEC-Q101	500 V	35 MHz	Automotive	TO-243AA	520 mW	150 mA

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	6303	$ 0.85

Description

General part information

PBHV8550X Series

NPN high-voltage low VCEsatBreakthrough In Small Signal (BISS) transistor in a medium power SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package.