Discrete Semiconductor Products

AUIRFP2907Z

Obsolete

MOSFETS AUTO 75V 1 N-CH HEXFET 4.5MOHMS

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Discrete Semiconductor Products

Obsolete

MOSFETS AUTO 75V 1 N-CH HEXFET 4.5MOHMS

Technical Specifications

Parameters and characteristics for this part

Specification	AUIRFP2907Z

Current - Continuous Drain (Id) @ 25°C	170 A
Drain to Source Voltage (Vdss)	75 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	270 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	7500 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	310 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	4.5 mOhm
Supplier Device Package	TO-247AC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Vgs (Max)	Technology	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Mounting Type	FET Type	Grade	Drain to Source Voltage (Vdss)	Qualification	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	Rds On (Max) @ Id, Vgs
INFINEON AUIRFP2907Z	20 V	MOSFET (Metal Oxide)	310 W	7500 pF	TO-247AC	170 A	Through Hole	N-Channel	Automotive	75 V	AEC-Q101	10 V	270 nC	TO-247-3	4 V	175 °C	-55 °C	4.5 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 75 V 170A (Tc) 310W (Tc) Through Hole TO-247AC

Technical documentation and resources