Specification	2SA1587-GR,LF

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce	200 hFE
Frequency - Transition	100 MHz
Mounting Type	Surface Mount
Operating Temperature	125 ¯C
Package / Case	SOT-323, SC-70
Power - Max [Max]	100 mW
Supplier Device Package	SC-70
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	120 V

2SA1587 Series

Bipolar Transistors, PNP Bipolar Transistor, -120 V, -0.1 A, SOT-323(USM)

Part	Transistor Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Mounting Type	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce	Package / Case	Operating Temperature	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
Toshiba Semiconductor and Storage 2SA1587-GR,LF	PNP	120 V	300 mV	100 mW	SC-70	100 mA	100 nA	Surface Mount	100 MHz	200 hFE	SC-70 SOT-323	125 ¯C
Toshiba Semiconductor and Storage 2SA1587-BL,LF	PNP	120 V	300 mV	100 mW	SC-70	100 mA	100 nA	Surface Mount	100 MHz		SC-70 SOT-323	125 ¯C	350

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar Transistors, PNP Bipolar Transistor, -120 V, -0.1 A, SOT-323(USM)

Technical documentation and resources