Discrete Semiconductor Products

SPB08P06P

Obsolete

MOSFET P-CH 60V 8.8A TO263-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET P-CH 60V 8.8A TO263-3

Technical Specifications

Parameters and characteristics for this part

Specification	SPB08P06P

Current - Continuous Drain (Id) @ 25°C	8.8 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	13 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	420 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	42 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs [Max]	0.3 mOhm
Supplier Device Package	PG-TO263-3-2
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Qualification	Operating Temperature [Max]	Operating Temperature [Min]	Grade	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id	Technology	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Vgs (Max)
INFINEON SPB08P06P	13 nC	PG-TO263-3-2	P-Channel	10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	AEC-Q101	175 °C	-55 °C	Automotive	0.3 mOhm	4 V	MOSFET (Metal Oxide)	420 pF	8.8 A	Surface Mount	60 V	42 W	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.42

General part information

P-Channel 60 V 8.8A (Ta) 42W (Tc) Surface Mount PG-TO263-3-2

Technical documentation and resources