Discrete Semiconductor Products

GT040N04M

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MOSFET,N-CH,40V,120A,82W,TO-263

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Discrete Semiconductor Products

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MOSFET,N-CH,40V,120A,82W,TO-263

Technical Specifications

Parameters and characteristics for this part

Specification	GT040N04M

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	42 nC
Input Capacitance (Ciss) (Max) @ Vds	2800 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	82 W
Rds On (Max) @ Id, Vgs	4 mOhm
Supplier Device Package	TO-263
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.3 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 1.48

General part information

MOSFET,N-CH,40V,120A,82W,TO-263

Technical documentation and resources