Discrete Semiconductor Products

SIHS90N65E-E3

Obsolete

MOSFET N-CH 650V 87A SUPER247

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 650V 87A SUPER247

Technical Specifications

Parameters and characteristics for this part

Specification	SIHS90N65E-E3

Current - Continuous Drain (Id) (Tc)	87 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	591 nC
Input Capacitance (Ciss) (Max)	11826 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-247-3
Package Name	SUPER-247™ (TO-274AA)
Power Dissipation (Max)	625 W
Rds On (Max)	29 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	4 V

Part	Rds On (Max)	Current - Continuous Drain (Id) (Tc)	Technology	FET Type	Input Capacitance (Ciss) (Max)	Gate Charge (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	Power Dissipation (Max)	Package Name	Vgs (Max)	Drain to Source Voltage (Vdss)	Package / Case	Vgs(th) (Max)	Drive Voltage (Max Rds On, Min Rds On)
Vishay Dale SIHS90N65E-E3	29 mOhm	87 A	MOSFET (Metal Oxide)	N-Channel	11826 pF	591 nC	-55 °C	150 °C	Through Hole	625 W	SUPER-247™ (TO-274AA)	30 V	650 V	TO-247-3	4 V	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 12.72	1m+

3D models and CAD resources for this part

General part information

N-Channel 650 V 87A (Tc) 625W (Tc) Through Hole SUPER-247™ (TO-274AA)

Technical documentation and resources