Discrete Semiconductor Products

MJD32CJ

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TRANS PNP 100V 3A DPAK

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Discrete Semiconductor Products

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TRANS PNP 100V 3A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	MJD32CJ

Current - Collector (Ic) (Max) [Max]	3 A
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	25 hFE
Frequency - Transition	3 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power - Max [Max]	1.6 W
Supplier Device Package	DPAK
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	1.2 V
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

Part	Package / Case	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Transistor Type	Supplier Device Package	Operating Temperature	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	Mounting Type	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]
Freescale Semiconductor - NXP MJD32CJ	DPAK (2 Leads + Tab) SC-63 TO-252-3	3 A	1.2 V	PNP	DPAK	150 °C	100 V	1.6 W	Surface Mount	3 MHz	25 hFE	1 µA

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General part information

Bipolar (BJT) Transistor PNP 100 V 3 A 3MHz 1.6 W Surface Mount DPAK

Technical documentation and resources