Discrete Semiconductor Products

GBU808

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BRIDGE RECT 1PHASE 800V 8A GBU

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Discrete Semiconductor Products

Active

BRIDGE RECT 1PHASE 800V 8A GBU

Technical Specifications

Parameters and characteristics for this part

Specification	GBU808

Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	5 µA
Diode Type	Single Phase
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	4-ESIP
Supplier Device Package	GBU
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1.1 V
Voltage - Peak Reverse (Max)	800 V

Part	Voltage - Forward (Vf) (Max) @ If	Technology	Package / Case	Current - Average Rectified (Io)	Mounting Type	Current - Reverse Leakage @ Vr	Voltage - Peak Reverse (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Diode Type	Supplier Device Package
SMC Diode Solutions GBU808	1.1 V	Standard	4-ESIP	8 A	Through Hole	5 µA	800 V	150 °C	-55 °C	Single Phase	GBU
SMC Diode Solutions GBU808G	1.1 V	Standard	4-ESIP	8 A	Through Hole	5 µA	800 V	150 °C	-55 °C	Single Phase	GBU

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bridge Rectifier Single Phase Standard 800 V Through Hole GBU

Technical documentation and resources