Discrete Semiconductor Products

IXTH150N15X4

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Littelfuse/Commercial Vehicle Products

DISCMSFT NCH HIPERFET-Q CLASS TO-247AD/ TUBE

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Discrete Semiconductor Products

IXTH150N15X4

Active

Littelfuse/Commercial Vehicle Products

DISCMSFT NCH HIPERFET-Q CLASS TO-247AD/ TUBE

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IXTH150N15X4

Current - Continuous Drain (Id) @ 25°C	150 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	105 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	5500 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	480 W
Rds On (Max) @ Id, Vgs	7.2 mOhm
Supplier Device Package	TO-247
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

IXTH150N15X4 Series

DiscMSFT NCh HiPerFET-Q Class TO-247AD

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Package / Case	Drain to Source Voltage (Vdss)	FET Type	Vgs (Max)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Technology	Current - Continuous Drain (Id) @ 25°C
Littelfuse/Commercial Vehicle Products IXTH150N15X4	5500 pF	105 nC	480 W	Through Hole	10 V	-55 °C	175 ░C	4.5 V	TO-247-3	150 V	N-Channel	20 V	7.2 mOhm	TO-247	MOSFET (Metal Oxide)	150 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 11.68
		30	$ 9.46
		120	$ 8.90
		510	$ 8.07
		1020	$ 7.40
Newark	Each	250	$ 7.77
		500	$ 7.22

Description

General part information

IXTH150N15X4 Series

These devices are developed using a charge compensation principle and proprietary process technology, resulting in Power MOSFETs with significantly reduced resistance RDS(on) and gate charge Qg. A low on-state resistance reduces the conduction losses; it also lowers the energy stored in the output capacitance, minimizing the switching losses. A low gate charge results in higher efficiency at light loads as well as lower gate drive requirements. In addition, these MOSFETs are avalanche rated and exhibit a superior dv/dt performance. Also due to the positive temperature coefficient of their on-state resistance, they can be operated in parallel to meet higher current requirements.

Documents

Technical documentation and resources