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6 PQFN
Discrete Semiconductor Products

IRFHS9351TRPBF

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INFINEON

IR MOSFET™ P+P DUAL POWER MOSFET ; PQFN 2 X 2 PACKAGE; 170 MOHM;

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6 PQFN
Discrete Semiconductor Products

IRFHS9351TRPBF

Active
INFINEON

IR MOSFET™ P+P DUAL POWER MOSFET ; PQFN 2 X 2 PACKAGE; 170 MOHM;

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIRFHS9351TRPBF
Configuration2 P-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C2.3 A
Drain to Source Voltage (Vdss)30 V
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]3.7 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]160 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case6-PowerVDFN
Power - Max [Max]1.4 W
Rds On (Max) @ Id, Vgs170 mOhm
Supplier Device Package6-PQFN Dual (2x2)
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.66
10$ 0.57
100$ 0.40
500$ 0.33
1000$ 0.28
2000$ 0.25
Digi-Reel® 1$ 0.66
10$ 0.57
100$ 0.40
500$ 0.33
1000$ 0.28
2000$ 0.25
N/A 118$ 1.01
Tape & Reel (TR) 4000$ 0.25
8000$ 0.24
12000$ 0.22
28000$ 0.22
NewarkEach (Supplied on Full Reel) 4000$ 0.32
8000$ 0.30
16000$ 0.30
24000$ 0.30
40000$ 0.29

Description

General part information

IRFHS9351 Series

The StrongIRFET™ power MOSFET family is optimized for low RDS(on)and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Documents

Technical documentation and resources