Discrete Semiconductor Products
BSS192,115
NRNDNexperia USA Inc.
240 V, P-CHANNEL VERTICAL D-MOS TRANSISTOR
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Discrete Semiconductor Products
BSS192,115
NRNDNexperia USA Inc.
240 V, P-CHANNEL VERTICAL D-MOS TRANSISTOR
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | BSS192,115 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 200 mA |
| Drain to Source Voltage (Vdss) | 240 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 90 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-243AA |
| Power Dissipation (Max) | 560 mW, 12.5 W |
| Rds On (Max) @ Id, Vgs | 12 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.8 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 7343 | $ 1.03 | |
Description
General part information
BSS192 Series
240 V, P-channel vertical D-MOS transistor
Documents
Technical documentation and resources