Discrete Semiconductor Products

UPA806T-T1-A

Obsolete

RF TRANS 2 NPN 6V 12GHZ SOT363

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Discrete Semiconductor Products

Obsolete

RF TRANS 2 NPN 6V 12GHZ SOT363

Technical Specifications

Parameters and characteristics for this part

Specification	UPA806T-T1-A

Current - Collector (Ic) (Max) [Max]	30 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	75
Frequency - Transition	12 GHz
Gain	8.5 dBi
Mounting Type	Surface Mount
Noise Figure (dB Typ @ f)	1.5 dB
Operating Temperature	150 °C
Package / Case	SOT-363, SC-88, 6-TSSOP
Power - Max [Max]	200 mW
Supplier Device Package	6-SuperMiniMold, SOT-363
Transistor Type	2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max) [Max]	6 V

Part	Power - Max [Max]	Mounting Type	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max) [Max]	Noise Figure (dB Typ @ f) [Max]	Noise Figure (dB Typ @ f) [Min]	Supplier Device Package	Operating Temperature	Current - Collector (Ic) (Max) [Max]	Package / Case	Noise Figure (dB Typ @ f)	Gain
Renesas Electronics Corporation UPA806T-T1	200 mW	Surface Mount	2 NPN (Dual)	75	12 GHz	6 V	2.5 dB	1.5 dB	6-SO	150 °C	30 mA	6-TSSOP SC-88 SOT-363
Renesas Electronics Corporation UPA806T-A	200 mW	Surface Mount	2 NPN (Dual)	75	12 GHz	6 V			SOT-363	150 °C	30 mA	6-TSSOP SC-88 SOT-363	1.5 dB	8.5 dBi
Renesas Electronics Corporation UPA806T-T1-A	200 mW	Surface Mount	2 NPN (Dual)	75	12 GHz	6 V			6-SuperMiniMold SOT-363	150 °C	30 mA	6-TSSOP SC-88 SOT-363	1.5 dB	8.5 dBi

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

RF Transistor 2 NPN (Dual) 6V 30mA 12GHz 200mW Surface Mount SOT-363

Technical documentation and resources