Discrete Semiconductor Products
PBSS4041NT-QR
ActiveNexperia USA Inc.
BIPOLAR TRANSISTORS - BJT 60 V, 6.2 A NPN LOW VCESAT TRANSISTOR
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Discrete Semiconductor Products
PBSS4041NT-QR
ActiveNexperia USA Inc.
BIPOLAR TRANSISTORS - BJT 60 V, 6.2 A NPN LOW VCESAT TRANSISTOR
Technical Specifications
Parameters and characteristics for this part
| Specification | PBSS4041NT-QR |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 3.8 A |
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 300 |
| Frequency - Transition | 175 MHz |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | SOT-23-3, TO-236-3, SC-59 |
| Power - Max [Max] | 390 mW |
| Qualification | AEC-Q101 |
| Supplier Device Package | TO-236AB |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 200 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 60 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
PBSS4041NT-Q Series
NPN low VCEsattransistor in a SOT23 small Surface-Mounted Device (SMD) plastic package.
Documents
Technical documentation and resources