Specification	NTGD4169FT1G

Current - Continuous Drain (Id) @ 25°C	2.6 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Feature	Schottky Diode (Isolated)
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	5.5 nC
Input Capacitance (Ciss) (Max) @ Vds	295 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-25 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Power Dissipation (Max) [Max]	900 mW
Rds On (Max) @ Id, Vgs	90 mOhm
Supplier Device Package	6-TSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.5 V

NTGD4161P Series

Small Signal MOSFET 30V 2.6A 90 mOhm Dual N-Channel TSOP6 FETKY

Part	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Power - Max [Max]	Drain to Source Voltage (Vdss)	FET Feature	Supplier Device Package	Package / Case	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Technology	Configuration	Vgs(th) (Max) @ Id	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor NTGD4161PT1G	1.5 A	281 pF	600 mW	30 V	Logic Level Gate	6-TSOP	SOT-23-6 Thin TSOT-23-6	160 mOhm	-55 °C	150 °C	Surface Mount	MOSFET (Metal Oxide)	2 P-Channel	3 V
ON Semiconductor NTGD4169FT1G	2.6 A	295 pF		30 V	Schottky Diode (Isolated)	6-TSOP	SOT-23-6 Thin TSOT-23-6	90 mOhm	-25 °C	150 °C	Surface Mount	MOSFET (Metal Oxide)		1.5 V	12 V	5.5 nC	N-Channel	900 mW	2.5 V 4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Power MOSFET, FETKY, 30V 2.9A N-Ch with Schottky Barrier Diode TSOP6

Technical documentation and resources