Discrete Semiconductor Products

NTMYS011N04CTWG

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POWER MOSFET, SINGLE N-CHANNEL, 40 V, 12 MOHM, 35 A

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Discrete Semiconductor Products

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POWER MOSFET, SINGLE N-CHANNEL, 40 V, 12 MOHM, 35 A

Technical Specifications

Parameters and characteristics for this part

Specification	NTMYS011N04CTWG

Current - Continuous Drain (Id) @ 25°C	13 A, 35 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	7.9 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	420 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-1023, 4-LFPAK
Power Dissipation (Max)	3.8 W, 28 W
Rds On (Max) @ Id, Vgs	12 mOhm
Supplier Device Package	LFPAK4
Supplier Device Package [x]	5
Supplier Device Package [y]	6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Power MOSFET, Single N-Channel, 40 V, 12 mOhm, 35 A

Part	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package [x]	Supplier Device Package	Supplier Device Package [y]	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Package / Case	Technology	FET Type
ON Semiconductor NTMYS011N04CTWG	7.9 nC	40 V	-55 °C	175 ░C	Surface Mount	420 pF	5	LFPAK4	6	13 A 35 A	20 V	3.5 V	10 V	3.8 W 28 W	12 mOhm	SOT-1023 4-LFPAK	MOSFET (Metal Oxide)	N-Channel

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General part information

Industrial Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance.