Discrete Semiconductor Products

RFU20TM5S

NRND

DIODE GEN PURP 530V 20A TO220FN

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Discrete Semiconductor Products

NRND

DIODE GEN PURP 530V 20A TO220FN

Technical Specifications

Parameters and characteristics for this part

Specification	RFU20TM5S

Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Package / Case	TO-220-3 Full Pack
Reverse Recovery Time (trr)	30 ns
Speed	500 ns, 200 mA
Supplier Device Package	TO-220FN
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	530 V
Voltage - Forward (Vf) (Max) @ If	2 V

Part	Operating Temperature - Junction [Max]	Mounting Type	Current - Reverse Leakage @ Vr	Technology	Voltage - Forward (Vf) (Max) @ If	Package / Case	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Supplier Device Package
Rohm Semiconductor RFU20TM5S	150 °C	Through Hole	10 µA	Standard	2 V	TO-220-3 Full Pack	30 ns	530 V	200 mA 500 ns	TO-220FN

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 530 V 20A Through Hole TO-220FN

Technical documentation and resources