Discrete Semiconductor Products

MIW75N65F-BP

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Discrete Semiconductor Products

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INTERFACE

Technical Specifications

Parameters and characteristics for this part

Specification	MIW75N65F-BP

Current - Collector (Ic) (Max) [Max]	75 A
Current - Collector Pulsed (Icm)	300 A
Gate Charge	130 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 C
Package / Case	TO-247-3
Power - Max [Max]	395 W
Supplier Device Package	TO-247-3
Switching Energy	920 µJ, 2.64 mJ
Td (on/off) @ 25°C	34 ns, 183 ns
Test Condition	400 V, 75 A, 15 V, 8 Ohm
Vce(on) (Max) @ Vge, Ic	1.95 V
Voltage - Collector Emitter Breakdown (Max)	650 V

Part	Voltage - Collector Emitter Breakdown (Max)	Current - Collector Pulsed (Icm)	Td (on/off) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	IGBT Type	Power - Max [Max]	Supplier Device Package	Vce(on) (Max) @ Vge, Ic	Gate Charge	Current - Collector (Ic) (Max) [Max]	Switching Energy	Test Condition	Package / Case	Mounting Type
Micro Commercial Components MIW75N65F-BP	650 V	300 A	34 ns 183 ns	-40 C	175 °C	Trench Field Stop	395 W	TO-247-3	1.95 V	130 nC	75 A	2.64 mJ 920 µJ	8 Ohm 15 V 75 A 400 V	TO-247-3	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	1800	$ 3.82

General part information

IGBT Trench Field Stop 650 V 75 A 395 W Through Hole TO-247-3

Technical documentation and resources