Discrete Semiconductor Products
SUP40012EL-GE3
ActiveVishay General Semiconductor - Diodes Division
MOSFET, N-CH, 150A, 40V, TO-220AB
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Discrete Semiconductor Products
SUP40012EL-GE3
ActiveVishay General Semiconductor - Diodes Division
MOSFET, N-CH, 150A, 40V, TO-220AB
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | SUP40012EL-GE3 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 150 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 195 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 10930 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 150 W |
| Rds On (Max) @ Id, Vgs | 1.79 mOhm |
| Supplier Device Package | TO-220AB |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
SUP40012 Series
N-Channel 40 V 150A (Tc) 150W (Tc) Through Hole TO-220AB
Documents
Technical documentation and resources