Discrete Semiconductor Products

NGTB03N60R2DT4G

Obsolete

TRANS IGBT CHIP N-CH 600V 9A 49W 3-PIN(2+TAB) DPAK T/R

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Discrete Semiconductor Products

Obsolete

TRANS IGBT CHIP N-CH 600V 9A 49W 3-PIN(2+TAB) DPAK T/R

Technical Specifications

Parameters and characteristics for this part

Specification	NGTB03N60R2DT4G

Current - Collector (Ic) (Max) [Max]	9 A
Current - Collector Pulsed (Icm)	12 A
Gate Charge	17 nC
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power - Max [Max]	49 W
Reverse Recovery Time (trr)	65 ns
Supplier Device Package	DPAK
Switching Energy	27 µJ, 50 µJ
Td (on/off) @ 25°C	59 ns, 27 ns
Test Condition	300 V, 30 Ohm, 15 V, 3 A
Vce(on) (Max) @ Vge, Ic	2.1 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Supplier Device Package	Reverse Recovery Time (trr)	Mounting Type	Power - Max [Max]	Gate Charge	Voltage - Collector Emitter Breakdown (Max) [Max]	Td (on/off) @ 25°C	Package / Case	Switching Energy	Current - Collector (Ic) (Max) [Max]	Operating Temperature	Test Condition	Vce(on) (Max) @ Vge, Ic	Current - Collector Pulsed (Icm)
ON Semiconductor NGTB03N60R2DT4G	DPAK	65 ns	Surface Mount	49 W	17 nC	600 V	27 ns 59 ns	DPAK (2 Leads + Tab) SC-63 TO-252-3	27 µJ 50 µJ	9 A	175 °C	3 A 15 V 30 Ohm 300 V	2.1 V	12 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	2500	$ 0.22

General part information

IGBT 600 V 9 A 49 W Surface Mount DPAK

Technical documentation and resources

No documents available