Discrete Semiconductor Products

MURH7060R

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DIODE GEN PURP 600V 70A D-67

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Discrete Semiconductor Products

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DIODE GEN PURP 600V 70A D-67

Technical Specifications

Parameters and characteristics for this part

Specification	MURH7060R

Current - Average Rectified (Io)	70 A
Current - Reverse Leakage @ Vr	25 µA
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	D-67
Reverse Recovery Time (trr)	110 ns
Speed	500 ns, 200 mA
Supplier Device Package	D-67
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.7 V

Part	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Supplier Device Package	Mounting Type	Speed	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If [Max]
GeneSiC Semiconductor MURH7060R	25 µA	110 ns	-55 °C	150 °C	D-67	600 V	Standard	D-67	Chassis Mount	200 mA 500 ns	70 A	1.7 V

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General part information

Diode 600 V 70A Chassis Mount D-67

Technical documentation and resources