Discrete Semiconductor Products

RJU3052SDPD-E0#J2

Obsolete

DIODE GEN PURP 360V 20A TO252

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Discrete Semiconductor Products

Obsolete

DIODE GEN PURP 360V 20A TO252

Technical Specifications

Parameters and characteristics for this part

Specification	RJU3052SDPD-E0#J2

Current - Reverse Leakage @ Vr	1 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Reverse Recovery Time (trr)	50 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-252
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	360 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Fast Recovery Diodes

Part	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Reverse Recovery Time (trr)	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Current - Reverse Leakage @ Vr	Speed	Voltage - Forward (Vf) (Max) @ If	Package / Case
Renesas Electronics Corporation RJU3052SDPD-E0#J2	Surface Mount	150 °C	-55 °C	50 ns	Standard	360 V	TO-252	1 µA	200 mA 500 ns	1.7 V	DPAK (2 Leads + Tab) SC-63 TO-252-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

We offer high-performance products with low forward voltage (VF) and high-speed reverse recovery time (trr) for increasing device efficiency.

Technical documentation and resources