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Technical Specifications
Parameters and characteristics for this part
| Specification | RF4E100AJTCR |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 10 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 1460 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerUDFN |
| Power Dissipation (Max) | 2 W |
| Rds On (Max) @ Id, Vgs | 12.4 mOhm |
| Supplier Device Package | HUML2020L8 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 12 V |
| Vgs(th) (Max) @ Id | 1.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
RF4E100AJ Series
RF4E100AJ is high power small mold package(HUML2020L8) MOSFET for switching and DC/DC converter, battery switch application.
Documents
Technical documentation and resources