Discrete Semiconductor Products

BAV20

Obsolete

DIODE GEN PURP 200V 200MA DO35

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Discrete Semiconductor Products

Obsolete

DIODE GEN PURP 200V 200MA DO35

Technical Specifications

Parameters and characteristics for this part

Specification	BAV20

Capacitance @ Vr, F	5 pF
Current - Average Rectified (Io)	200 mA
Current - Reverse Leakage @ Vr	100 nA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 °C
Package / Case	Axial, DO-35, DO-204AH
Reverse Recovery Time (trr)	50 ns
Speed	Any Speed
Speed	200 mA
Supplier Device Package	DO-35
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	1.25 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Capacitance @ Vr, F	Technology	Supplier Device Package	Speed	Speed	Current - Average Rectified (Io)	Package / Case	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Reverse Recovery Time (trr)	Operating Temperature - Junction [Max]
ON Semiconductor BAV20	200 V	5 pF	Standard	DO-35	Any Speed	200 mA	200 mA	Axial DO-204AH DO-35	100 nA	1.25 V	Through Hole	50 ns	175 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	10000	$ 0.02

General part information

Diode 200 V 200mA Through Hole DO-35

Technical documentation and resources