Discrete Semiconductor Products

BCW68G

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PNP GENERAL PURPOSE AMPLIFIER

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Discrete Semiconductor Products

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PNP GENERAL PURPOSE AMPLIFIER

Technical Specifications

Parameters and characteristics for this part

Specification	BCW68G

Current - Collector (Ic) (Max) [Max]	800 mA
Current - Collector Cutoff (Max) [Max]	20 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	160
Frequency - Transition	100 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	350 mW
Supplier Device Package	SOT-23-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	1.5 V
Voltage - Collector Emitter Breakdown (Max)	45 V

PNP General Purpose Amplifier

Part	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Frequency - Transition	Package / Case
ON Semiconductor BCW68G	20 nA	45 V	160	800 mA	350 mW	PNP	1.5 V	Surface Mount	-55 °C	150 °C	SOT-23-3	100 MHz	SC-59 SOT-23-3 TO-236-3
ON Semiconductor BCW68G	20 nA	45 V	160	800 mA	350 mW	PNP	1.5 V	Surface Mount	-55 °C	150 °C	SOT-23-3	100 MHz	SC-59 SOT-23-3 TO-236-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This device is designed for general purpose amplifier and switching applications at currents to 500 mA. Sourced from Process 63.