Discrete Semiconductor Products

VS-65EPF06LHM3

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DIODE GEN PURP 600V 65A TO247AD

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Discrete Semiconductor Products

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DIODE GEN PURP 600V 65A TO247AD

Technical Specifications

Parameters and characteristics for this part

Specification	VS-65EPF06LHM3

Current - Average Rectified (Io)	65 A
Current - Reverse Leakage @ Vr	100 µA
Grade	Automotive
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	TO-247-2
Qualification	AEC-Q101
Reverse Recovery Time (trr)	180 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-247AD
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.32 V

Part	Grade	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Reverse Leakage @ Vr	Qualification	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Reverse Recovery Time (trr)	Package / Case	Technology
Vishay General Semiconductor - Diodes Division VS-65EPF06LHM3	Automotive	200 mA 500 ns	600 V	65 A	Through Hole	150 °C	-40 °C	100 µA	AEC-Q101	1.32 V	TO-247AD	180 ns	TO-247-2	Standard

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	500	$ 3.20

General part information

Diode 600 V 65A Through Hole TO-247AD

Technical documentation and resources