FQA11N90-F109

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ON Semiconductor

POWER MOSFET, N-CHANNEL, QFET®, 900V, 11.4A, 960MΩ, TO-3P

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DocumentsPackage Drawing-340BZ-TO-3P-3LD / EIAJ SC-65, ISOLATED Datasheet

Discrete Semiconductor Products

FQA11N90-F109

Active

ON Semiconductor

POWER MOSFET, N-CHANNEL, QFET®, 900V, 11.4A, 960MΩ, TO-3P

Deep-Dive with AI

DocumentsPackage Drawing-340BZ-TO-3P-3LD / EIAJ SC-65, ISOLATED Datasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FQA11N90-F109

Current - Continuous Drain (Id) @ 25°C	11.4 A
Drain to Source Voltage (Vdss)	900 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	94 nC
Input Capacitance (Ciss) (Max) @ Vds	3500 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-65-3, TO-3P-3
Power Dissipation (Max) [Max]	300 W
Rds On (Max) @ Id, Vgs	960 mOhm
Supplier Device Package	TO-3PN
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

FQA11N90-F109 Series

Power MOSFET, N-Channel, QFET®, 900V, 11.4A, 960mΩ, TO-3P

Part	Vgs(th) (Max) @ Id	Package / Case	Mounting Type	Drain to Source Voltage (Vdss)	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor FQA11N90-F109	5 V	SC-65-3 TO-3P-3	Through Hole	900 V	MOSFET (Metal Oxide)	-55 °C	150 °C	300 W	960 mOhm	94 nC	30 V	TO-3PN	11.4 A	N-Channel	3500 pF	10 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

ON Semiconductor	N/A	1	$ 2.61

Description

General part information

FQA11N90-F109 Series

This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.