Discrete Semiconductor Products
RF4C100BCTCR
ActiveRohm Semiconductor
PCH -20V -10A MIDDLE POWER MOSFET
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Discrete Semiconductor Products
RF4C100BCTCR
ActiveRohm Semiconductor
PCH -20V -10A MIDDLE POWER MOSFET
Technical Specifications
Parameters and characteristics for this part
| Specification | RF4C100BCTCR |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 10 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) [Max] | 1.8 V |
| Drive Voltage (Max Rds On, Min Rds On) [Min] | 4.5 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 23.5 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1660 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 8-PowerUDFN |
| Power Dissipation (Max) | 2 W |
| Rds On (Max) @ Id, Vgs | 15.6 mOhm |
| Supplier Device Package | HUML2020L8 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) [Max] | 8 V |
| Vgs(th) (Max) @ Id | 1.2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 1270 | $ 1.07 | |
Description
General part information
RF4C100BC Series
Pch -20V -10A Middle Power MOSFET
Documents
Technical documentation and resources