Discrete Semiconductor Products

PMN20ENAX

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MOSFET N-CH 40V 6.2A 6TSOP

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Discrete Semiconductor Products

Active

MOSFET N-CH 40V 6.2A 6TSOP

Technical Specifications

Parameters and characteristics for this part

Specification	PMN20ENAX

Current - Continuous Drain (Id) @ 25°C	6.2 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	17 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	582 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-74, SOT-457
Power Dissipation (Max)	7.5 W, 652 mW
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	23 mOhm
Supplier Device Package	6-TSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.7 V

Part	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Qualification	Power Dissipation (Max)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Technology	FET Type	Package / Case	Grade	Supplier Device Package
Freescale Semiconductor - NXP PMN20ENAX	40 V	4.5 V 10 V	582 pF	23 mOhm	2.7 V	6.2 A	AEC-Q101	7.5 W 652 mW	Surface Mount	-55 °C	175 ░C	20 V	17 nC	MOSFET (Metal Oxide)	N-Channel	SC-74 SOT-457	Automotive	6-TSOP

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General part information

N-Channel 40 V 6.2A (Ta) 652mW (Ta), 7.5W (Tc) Surface Mount 6-TSOP

Technical documentation and resources