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SOT457
Discrete Semiconductor Products

PMN20ENAX

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Nexperia USA Inc.

40 V, N-CHANNEL TRENCH MOSFET

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SOT457
Discrete Semiconductor Products

PMN20ENAX

Active
Nexperia USA Inc.

40 V, N-CHANNEL TRENCH MOSFET

Technical Specifications

Parameters and characteristics for this part

SpecificationPMN20ENAX
Current - Continuous Drain (Id) @ 25°C6.2 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs17 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds [Max]582 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-457, SC-74
Power Dissipation (Max)652 mW, 7.5 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs23 mOhm
Supplier Device Package6-TSOP
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.7 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.46
10$ 0.40
100$ 0.28
500$ 0.21
1000$ 0.17
Digi-Reel® 1$ 0.46
10$ 0.40
100$ 0.28
500$ 0.21
1000$ 0.17
N/A 0$ 0.90
232$ 0.90
Tape & Reel (TR) 3000$ 0.15
6000$ 0.14
9000$ 0.14

Description

General part information

PMN20 Series

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.