Discrete Semiconductor Products

PSMN005-75B,118

LTB

MOSFET N-CH 75V 75A D2PAK

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Discrete Semiconductor Products

LTB

MOSFET N-CH 75V 75A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN005-75B,118

Current - Continuous Drain (Id) @ 25°C	75 A
Drain to Source Voltage (Vdss)	75 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	165 nC
Input Capacitance (Ciss) (Max) @ Vds	8250 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	230 W
Rds On (Max) @ Id, Vgs	5 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Mounting Type	Vgs (Max)	Package / Case	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Technology	Current - Continuous Drain (Id) @ 25°C
Freescale Semiconductor - NXP PSMN005-75B,118	8250 pF	5 mOhm	Surface Mount	20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	D2PAK	-55 °C	175 ░C	N-Channel	165 nC	10 V	75 V	230 W	MOSFET (Metal Oxide)	75 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 75 V 75A (Tc) 230W (Tc) Surface Mount D2PAK

Technical documentation and resources