Beta

⌘K

R6022YNZ4C13

Discrete Semiconductor Products

RGTH80TS65GC13

Active

Rohm Semiconductor

HIGH-SPEED SWITCHING TYPE, 650V 40A, TO-247N, FIELD STOP TRENCH IGBT

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsGeneration Mechanism of Voltage Surge on Commutation Side (Basic)θ<sub>JA</sub> and Ψ<sub>JT</sub>+41

R6022YNZ4C13

Discrete Semiconductor Products

RGTH80TS65GC13

Active

Rohm Semiconductor

HIGH-SPEED SWITCHING TYPE, 650V 40A, TO-247N, FIELD STOP TRENCH IGBT

Deep-Dive with AI

DocumentsGeneration Mechanism of Voltage Surge on Commutation Side (Basic)θ<sub>JA</sub> and Ψ<sub>JT</sub>+41

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	RGTH80TS65GC13

Current - Collector (Ic) (Max) [Max]	70 A
Gate Charge	79 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-247-3
Power - Max [Max]	234 W
Supplier Device Package	TO-247G
Td (on/off) @ 25°C [Max]	120 ns
Td (on/off) @ 25°C [Min]	34 ns
Test Condition	400 V, 10 Ohm, 15 V, 40 A
Vce(on) (Max) @ Vge, Ic	2.1 V
Voltage - Collector Emitter Breakdown (Max) [Max]	650 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	584	$ 6.42
	Tube	1	$ 4.54
		10	$ 3.05
		100	$ 2.56
		600	$ 2.57
		1200	$ 2.56
Newark	Each	1	$ 6.35
		10	$ 4.27
		25	$ 4.26
		50	$ 3.73
		100	$ 3.20
		250	$ 3.19

Description

General part information

RGTH80 Series

ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.

Documents

Technical documentation and resources

Generation Mechanism of Voltage Surge on Commutation Side (Basic)

Technical Article

θ<sub>JA</sub> and Ψ<sub>JT</sub>

Package Dimensions - TO-247GE

Package Information

Compliance of the ELV directive

Environmental Data

Impedance Characteristics of Bypass Capacitor

Schematic Design & Verification

Types and Features of Transistors

Application Note

Notes for Temperature Measurement Using Forward Voltage of PN Junction

How to Create Symbols for PSpice Models

How to Use the Thermal Resistance and Thermal Characteristics Parameters

Estimation of switching losses in IGBTs operating with resistive load

Schematic Design & Verification

Notes for Temperature Measurement Using Thermocouples

Power Eco Family: Overview of ROHM's Power Semiconductor Lineup

Basics of Thermal Resistance and Heat Dissipation

Notes for Calculating Power Consumption:Static Operation

Reliability Test Result

Manufacturing Data

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

The Problem with Traditional Vaccine Storage Freezers and How ROHM Cutting-edge Power Solutions Can Take them to the Next Level

Method for Monitoring Switching Waveform

Schematic Design & Verification

Importance of Probe Calibration When Measuring Power: Deskew

Schematic Design & Verification

What Is Thermal Design

Precautions for Thermal Resistance of Insulation Sheet

Judgment Criteria of Thermal Evaluation

RGTH80TS65 Data Sheet

About Export Administration Regulations (EAR)

Export Information

Condition of Soldering

Package Information

How to Use LTspice® Models

Schematic Design & Verification

Precautions When Measuring the Rear of the Package with a Thermocouple

θ<sub>JC</sub> and Ψ<sub>JT</sub>

PCB Layout Thermal Design Guide

Anti-Whisker formation

Package Information

Calculation of Power Dissipation in Switching Circuit

Schematic Design & Verification

About Flammability of Materials

Environmental Data

Two-Resistor Model for Thermal Simulation

Measurement Method and Usage of Thermal Resistance RthJC

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Technical Article

Semikron Danfoss: Partnering for the Safe Supply of Industrial Power Modules

4 Steps for Successful Thermal Designing of Power Devices

Part Explanation

Application Note

How to Use LTspice® Models: Tips for Improving Convergence

Schematic Design & Verification

What is a Thermal Model? (IGBT)

Moisture Sensitivity Level

Package Information

Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials

Technical Data Sheet EN

RGTH80 Series

High-Speed Switching Type, 650V 40A, FRD Built-in, TO-247N, Field Stop Trench IGBT

Part	Supplier Device Package	Reverse Recovery Time (trr)	IGBT Type	Operating Temperature [Max]	Operating Temperature [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Gate Charge	Current - Collector (Ic) (Max) [Max]	Test Condition	Td (on/off) @ 25°C [Min]	Td (on/off) @ 25°C [Max]	Package / Case	Vce(on) (Max) @ Vge, Ic	Power - Max [Max]
Rohm Semiconductor RGTH80TS65DGC13	TO-247G	236 ns	Trench Field Stop	175 °C	-40 °C	650 V	Through Hole	79 nC	70 A	10 Ohm 15 V 40 A 400 V	34 ns	120 ns	TO-247-3	2.1 V	234 W
Rohm Semiconductor RGTH80TS65GC13	TO-247G		Trench Field Stop	175 °C	-40 °C	650 V	Through Hole	79 nC	70 A	10 Ohm 15 V 40 A 400 V	34 ns	120 ns	TO-247-3	2.1 V	234 W
Rohm Semiconductor RGTH80TS65DGC11	TO-247N	58 ns	Trench Field Stop	175 °C	-40 °C	650 V	Through Hole	79 nC	70 A	10 Ohm 15 V 40 A 400 V	34 ns	120 ns	TO-247-3	2.1 V	234 W