Discrete Semiconductor Products

HN2C01FU-Y(TE85L,F

Obsolete

TRANS 2NPN 50V 0.15A US6

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Discrete Semiconductor Products

Obsolete

TRANS 2NPN 50V 0.15A US6

Technical Specifications

Parameters and characteristics for this part

Specification	HN2C01FU-Y(TE85L,F

Current - Collector (Ic) (Max) [Max]	150 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Mounting Type	Surface Mount
Operating Temperature	125 ¯C
Package / Case	SOT-363, SC-88, 6-TSSOP
Power - Max [Max]	200 mW
Supplier Device Package	US6
Transistor Type	2 NPN (Dual)
Vce Saturation (Max) @ Ib, Ic	250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Operating Temperature	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Transistor Type	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Mounting Type	Frequency - Transition
Toshiba Semiconductor and Storage HN2C01FU-Y(TE85L,F	125 ¯C	6-TSSOP SC-88 SOT-363	120	50 V	250 mV	2 NPN (Dual)	100 nA	200 mW	150 mA	US6	Surface Mount
Toshiba Semiconductor and Storage HN2C01FEYTE85LF	150 °C	SOT-563 SOT-666	120	50 V	250 mV	2 NPN (Dual)	100 nA	100 mW	150 mA	ES6	Surface Mount	60 MHz

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.08

General part information

Bipolar (BJT) Transistor Array 2 NPN (Dual) 50V 150mA 80MHz 200mW Surface Mount US6

Technical documentation and resources